Ultra-low resistive GaSb/InAs tunnel junctions
Identifieur interne : 002194 ( Main/Repository ); précédent : 002193; suivant : 002195Ultra-low resistive GaSb/InAs tunnel junctions
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Abstract
The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n+-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10-7 Ω cm2. This value is nearly ten times better than previously reported best values.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ultra-low resistive GaSb/InAs tunnel junctions</title><author><name sortKey="Vizbaras, Kristijonas" uniqKey="Vizbaras K">Kristijonas Vizbaras</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 3</s1><s2>Garching, 85478</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85478</wicri:noRegion><wicri:noRegion>Am Coulombwall 3</wicri:noRegion><wicri:noRegion>Garching, 85478</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Torpe, Marcel" uniqKey="Torpe M">Marcel Torpe</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 3</s1><s2>Garching, 85478</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85478</wicri:noRegion><wicri:noRegion>Am Coulombwall 3</wicri:noRegion><wicri:noRegion>Garching, 85478</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Arafin, Shamsul" uniqKey="Arafin S">Shamsul Arafin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 3</s1><s2>Garching, 85478</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85478</wicri:noRegion><wicri:noRegion>Am Coulombwall 3</wicri:noRegion><wicri:noRegion>Garching, 85478</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Amann, Markus Christian" uniqKey="Amann M">Markus-Christian Amann</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 3</s1><s2>Garching, 85478</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85478</wicri:noRegion><wicri:noRegion>Am Coulombwall 3</wicri:noRegion><wicri:noRegion>Garching, 85478</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0473673</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0473673 INIST</idno><idno type="RBID">Pascal:11-0473673</idno><idno type="wicri:Area/Main/Corpus">002649</idno><idno type="wicri:Area/Main/Repository">002194</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term><term>Electrical conductivity</term><term>Gallium antimonides</term><term>IV characteristic</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Stoichiometry</term><term>Tunnel junction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique courant tension</term><term>Stoechiométrie</term><term>Epitaxie jet moléculaire</term><term>Conductivité électrique</term><term>Densité courant</term><term>Antimoniure de gallium</term><term>Arséniure d'indium</term><term>Jonction tunnel</term><term>GaSb</term><term>InAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p<sup>+</sup>-GaSb/n<sup>+</sup>-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10<sup>-7 </sup>Ω cm<sup>2</sup>. This value is nearly ten times better than previously reported best values.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>26</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ultra-low resistive GaSb/InAs tunnel junctions</s1></fA08><fA11 i1="01" i2="1"><s1>VIZBARAS (Kristijonas)</s1></fA11><fA11 i1="02" i2="1"><s1>TORPE (Marcel)</s1></fA11><fA11 i1="03" i2="1"><s1>ARAFIN (Shamsul)</s1></fA11><fA11 i1="04" i2="1"><s1>AMANN (Markus-Christian)</s1></fA11><fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 3</s1><s2>Garching, 85478</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s2>075021.1-075021.4</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000190449900220</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0473673</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p<sup>+</sup>-GaSb/n<sup>+</sup>-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10<sup>-7 </sup>Ω cm<sup>2</sup>. This value is nearly ten times better than previously reported best values.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>IV characteristic</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Densité courant</s0><s5>11</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Current density</s0><s5>11</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Jonction tunnel</s0><s5>17</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Tunnel junction</s0><s5>17</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Unión túnel</s0><s5>17</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>GaSb</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>325</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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